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2SK1315(L)(S), 2SK1316(L)(S)
Silicon N-Channel MOS FET
November 1996 Application
High speed power switching
Features
N N N N N
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver
Outline
LDPAK 4 4
12 1 D G 2 3
3
S
1. Gate 2. Drain 3. Source 4. Drain
2SK1315(L)(S), 2SK1316(L)(S)
Absolute Maximum Ratings (Ta = 25GC)
Item Drain to source voltage 2SK1315 2SK1316 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1. PW d 10 Ps, duty cycle d 1% 2. Value at TC = 25qC VGSS ID ID(pulse)* IDR Pch* Tch Tstg
2 1
Symbol VDSS
Ratings 450 500
Unit V
r30
8 32 8 60 150 -55 to +150
V A A A W
qC qC
2
2SK1315(L)(S), 2SK1316(L)(S)
Electrical Characteristics (Ta = 25GC)
Item Drain to source breakdown voltage Symbol Min 2SK1315 V(BR)DSS 2SK1316 V(BR)GSS IGSS 450 500 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = r100 PA, VDS = 0 VGS = r25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 -- -- |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 4.5 -- -- -- -- -- -- -- -- -- -- 0.55 0.60 7.5 1150 340 55 17 55 100 45 0.9 350 3.0 0.7 0.8 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V ns IF = 8 A, VGS = 0 IF = 8 A, VGS = 0, diF/dt = 100 A/Ps ID = 4 A, VGS = 10 V, RL = 7.5 : ID = 4 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz
1
Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current
r30
-- --
-- -- --
--
V
r10
250
2SK1315 IDSS 2SK1316
PA PA
V
Gate to source cutoff voltage
Static Drain to source 2SK1315 RDS(on) on state resistance 2SK1316 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test
:
ID = 1 mA, VDS = 10 V ID = 4 A, VGS = 10 V *
1
See characteristic curves of 2SK1159, 2SK1160.
3
2SK1315(L)(S), 2SK1316(L)(S)
Power vs. Temperature Derating 60
Channel Dissipation Pch (W)
40
20
0
50 100 Case Temperature TC (C)
150
4
2SK1315(L)(S), 2SK1316(L)(S)
Notice
When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS.
5

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